Transmission Coefficient for a Double-Barrier Quantum Well Structure
نویسندگان
چکیده
منابع مشابه
Theoretical Computation of Transmission Coefficient of Double Quantum Well Triple Barrier Structure in Presence of Electric Field
A numerical computation for determination of transmission coefficient of a double quantum well triple barrier structure is carried out considering GaAs/AlxGa1-xAs material composition for finite contact barrier thickness to estimate the probability of resonance at specific energy values less than barrier potential in presence and absence of electric field using transfer matrix technique. Barrie...
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-Transmission coefficient, eigen states and tunneling current density of a potentially symmetric quantum double barrier structure has been numerically computed using transfer matrix technique for qualitative analysis of resonant tunneling probability when realistic band structure of higher band gap material is taken into account. GaAs/AlxGa1-xAs material composition is taken as an example for c...
متن کاملResonant tunneling in double-quantum-well triple-barrier heterostructures.
We present a low-temperature ~mK! magnetotransport study, using intense pulsed magnetic fields to 50 T, of two double GaAs quantum well, triple AlAs barrier resonant tunneling structures, which demonstrates the critical influence of the second quantum well on the tunneling behavior. We show that charge accumulation in the first well, and thus the overall tunneling characteristic, is controlled ...
متن کاملCurrent fluctuations in double-barrier quantum well resonant tunneling diodes
The measurements of the spectral intensity of the current fluctuations in double-barrier quantum well resonant tunneling diodes as a function of temperature and bias current are reported. Two types of devices were studied: one with AlAs barriers and GaAs well and contact regions, and the other has Alo,,Gae,As barriers. The frequency range covered is 1 Hz-100 kHz and the temperature range is 78-...
متن کاملHigh magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode
We have measured the magnetotransport of double GaAs quantum well-triple AlAs barrier resonant tunneling heterostructures in pulsed magnetic fields up to 48 T, and temperatures down to 0.3 K. The tunneling structure is designed for a near-simultaneous (triple) resonance, under bias, of the quantum well energy levels and the lowest quasi-2D emitter state. The fan chart of the I(V) resonances is ...
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ژورنال
عنوان ژورنال: Acta Physica Polonica A
سال: 1991
ISSN: 0587-4246,1898-794X
DOI: 10.12693/aphyspola.80.441